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Microelectronics Center, Southeast University | 論文
- Calculation and Analysis of the Intrinsic Carrier Concentration and the Einstein Relation for Heavily Doped Silicon from 77 K to 300 K
- 77K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors
- A New Interpretation of the Orientation Effect in GaAs Metal Semiconductor Field Effect Transistors
- Controlled Assembly of Patterned Gold Thin Films Using Photolithographed Self-assembled Monolayers as Templates
- A Novel Surface-Site Model for the Oxide / Aqueous Electrolyte Interface