Calculation and Analysis of the Intrinsic Carrier Concentration and the Einstein Relation for Heavily Doped Silicon from 77 K to 300 K

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-03-15

著者

• Zheng Jiang

  Microelectronics Center Southeast University

• XIAO XZhixiong

  Microelectronics Center, Southeast University

• WEI Tongli

  Microelectronics Center, Southeast University

• Wei Tongli

  Microelectronics Center Southeast University

• Xiao Xzhixiong

  Microelectronics Center Southeast University

• ZHENG Jiang

  Microelectronics Center, Southeast University

関連論文

• Calculation and Analysis of the Intrinsic Carrier Concentration and the Einstein Relation for Heavily Doped Silicon from 77 K to 300 K
• 77K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors

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