77K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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Wang Y
Department Of Electronic Science & Technology Huazhong University Of Science & Technology
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Wang Yunbo
Department Of Electronic Science And Technology Huazhong University Of Science And Technology
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Zheng Jiang
Microelectronics Center Southeast University
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WEI Tongli
Microelectronics Center, Southeast University
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WU Jing
Microelectronics Center, Southeast University
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WANG Yian
Microelectronics Center, Southeast University
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WANG Shu
Microelectronics Center, Southeast University
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TONG Qinyi
Microelectronics Center, Southeast University
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Wu J
National Taiwan Univ. Taipei Twn
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Wang S
Osaka Gas Co. Ltd. Osaka Jpn
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Wei T
Southeast Univ. Naijing Chn
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Wei Tongli
Microelectronics Center Southeast University
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Tong Qinyi
Microelectronics Center Southeast University
関連論文
- Fabrication and Characterization of Metal/Ferroelectric/Semiconductor Field Effect Transistor with the Ag/Bi_4Ti_3O_/p-Si(100) Structure
- Characteristics of Pb(Zr_Ti_)O_3 Thin Films on p-Si with a Buffer Layer of Bi_4Ti_3O_ Prepared by Pulsed Laser Deposition
- Calculation and Analysis of the Intrinsic Carrier Concentration and the Einstein Relation for Heavily Doped Silicon from 77 K to 300 K
- 77K Operation of Amorphous Si/Si Heterojunction Bipolar Transistors