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MIRAI-AIST | 論文
- Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
- Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures
- Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime
- Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain