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Laas Cnrs Toulouse Fra | 論文
- Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors
- Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3
- Semi-Insulating Polycrystalline Silicon by Low Pressure Chemical Vapour Deposition from Disilane and Nitrous Oxide
- Simplex-Deep Level Transient Spectroscopy: A New Method of Transient Capacitance Signal Processing