Simplex-Deep Level Transient Spectroscopy: A New Method of Transient Capacitance Signal Processing
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概要
- 論文の詳細を見る
A new method of measuring the energy levels and capture cross sections of band gap traps has been developed. This method is based on deep level transient spectroscopy (DLTS) experimentation and simplex linear programming analysis; it concerns transient capacitance signal processing. This method can be performed on a pn junction or metal-insulator-semiconductor structure. Its advantage over conventional signal filtering, which is the double fast Fourier transform DLTS (FT-DLTS) method, is that it analyses directly, in the multiexponential mode, the transient capacitance signal. Comparing the two methods as applied to InP metal-insulator-semiconductor structures, the new method detects two close deep levels in the band gap where the FT-DLTS method detects only one.
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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Benzohra M
Laas Cnrs Toulouse Fra
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BENZOHRA Mohammed
Laboratoire d'Analyse des Composants an Silicium, Universite des Sciences et de to Technologie d'Ora
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MEDEGHRI-RACHEDI Nadia
Laboratoire d'Analyse des Composants an Silicium, Universite des Sciences et de to Technologie d'Ora
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HBIB Hassan
Groupe de Microcelectronique et de Visualisation, Universite de Rennes I
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Hbib Hassan
Groupe De Microcelectronique Et De Visualisation Universite De Rennes I
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Medeghri-rachedi Nadia
Laboratoire D'analyse Des Composants An Silicium Universite Des Sciences Et De To Technologie D
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Benzohra Mohammed
Laboratoire d'Analyse des Composants an Silicium, Universite des Sciences et de to Technologie d'Oran:(Present address) LAAS du CNRS, 7 avenue du Colonel ROCHE