スポンサーリンク
LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan | 論文
- Improvement of Uniformity and Reliability of Scaled-Down Cu Interconnects with Carbon-Rich Low-$k$ Films
- Interfacial Atomic Structure Between Pt-Added NiSi and Si(001)
- Basic Performance of a Logic Intellectual Property Compatible Embedded Dynamic Random Access Memory with Cylinder Capacitors in Low-k/Cu Back End on the Line Layers (Special Issue : Solid State Devices and Materials (1))
- Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure