Interfacial Atomic Structure Between Pt-Added NiSi and Si(001)

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概要

• 論文の詳細を見る

• A scanning transmission electron microscopy analysis of a Pt-added NiSi/Si(001) interfacial structure revealed that the interface is atomically abrupt and that Pt atoms segregate at the first NiSi interfacial atomic layer and occupy the Ni sites. In addition, the in-plane distribution of the Pt atoms is affected by the lattice stress distribution at the interface. Thus, we inferred that the Pt segregation lowered the interfacial stress to reduce the interface energy and that this interface energy reduction plays an important role in stabilizing the NiSi phase.

• 2011-04-25

著者

• Ikarashi Nobuyuki

  LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan

• Narihiro Mitsuru

  LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan

• Hase Takashi

  LSI Research Laboratory, Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan

関連論文

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• Interfacial Atomic Structure Between Pt-Added NiSi and Si(001)
• Effects of Low-k Stack Structure on Performance of Complementary Metal Oxide Semiconductor Devices and Chip Package Interaction Failure

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