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Korea Inst. Sci. And Technol. Seoul Kor | 論文
- Characteristics of Quantum wire structures grown by low pressure MOCVD
- Structures and Physical Properties of Poly(ethylene 2,6-naphthalate) / Liquid Crystalline Polymer Blends
- Crystalline Morphology and Melting Behavior of 100% Syndiotactic Polystyrene and 70/30 Blend of Syndiotactic Polystyrene and Poly(2,6-dimethyl-1,4-phenylenoxide)
- Analysis of substance P in rat brain by means of immunoaffinity capture and matrix-assisted laser desorption/ionization time-of-flight mass-spectrometry
- Crystallization of Amorphous Silicon by Excimer Laser Annealing with a Line Shape Beam Having a Gaussian Profile
- Injection Locking of a Modified-Unstable-Resonator XeCl Laser by Using a Line-Narrowed Hemiconfocal Oscillator
- Fabrication and Annealing Effect of c-Axis Orientated Potassium Lithium Niobate Thin Film on Glass Substrate
- Growth of Four-fold Grained K_3Li_2Nb_5O_ Thin Film Using RF-Magnetron Sputtering
- (012) Preferred Orientation of LiNbO_3 Thin Films by RF-Magnetron Sputtering
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- High Stability Resonator for Pulsed Solid State Lasers
- Simple Modification of Positive-Branch Unstable Resonator for Diffraction-Limited XeCl Laser Beam
- Comparison of Propagation Losses of Single-Mode GaAs/AlGaAs Waveguides in a Three- and a Five-Layer Structure
- Degradation of Performance due to Photoinduced Index Change in a Ti:LiNbO_3 Two-Mode Interference Wavelength Division Multi/Demultiplexer
- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application
- H-Polarized Diffraction by a Wedge Consisting of Perfect Conductor and Lossless Dielectric
- Simple Model for Gate-Voltage Dependent Parasitic Resistance in Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors
- Coverage Dependence of the Surface Diffusion Length for Monolayer Absorption