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Kitaitami Works Mitsubishi Electric Corp. | 論文
- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
- The Effect of Gas Plasma Irradiation on Transistor
- Characteristics of the Junction-Stripe-Geometry GaAs-GaAlAs Double-Heterostructure Lasers
- Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes
- Formation of Thin Oxide Films of Silicon by Gas Plasma