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Joint Research Center for Atom Technology (JRCAT):Angstrom Technology Partnership (ATP) | 論文
- Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
- Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors (Special issue: Dielectric thin films for future electron devices: science and technology)