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Jasco Corp. Tokyo Jpn | 論文
- One-Step Grown Lateral p-n Junctions on GaAs (001) Patterned Substrates with (110) Sidewalls by Molecular Beam Epitaxy
- Spatially Resolved Detection of Electroluminescemce from Lateral p-n unctions on GaAs (111)A Patterned Substrates Using a Near-Field Scanning Optical Microscope
- Raman Spectroscopy and Positron Lifetime Studies of Structural Relaxation and Defect Evolution in Amorphous Silicon
- Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
- Role of Vacancy-Type Defects during Structural Relaxation of Amorphous Si
- Optical Properties of CdTe Microcrystallites in CaF_2
- Characteristics of a New High-Sensitivity X-Ray Imaging Tube for Video Topography
- Solid-Phase Epitaxy with X-Ray Irradiation to Grow Dislocation-Free Silicon Films at Low Temperatures
- Far-Infrared Reflectance Spectra of Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions