スポンサーリンク
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan | 論文
- Fabrication of Graphene Directly on SiO without Transfer Processes by Annealing Sputtered Amorphous Carbon (Special Issue : Solid State Devices and Materials (2))
- Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
- Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe