スポンサーリンク
Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan | 論文
- Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime
- Ratio of Transverse Diffusion Coefficient to Mobility of Electrons in High-Pressure Xenon and Xenon Doped with Hydrogen
- Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge
- Si Substrate Suitable for Radiation-Resistant Space Solar Cells
- Non-contact Thermophysical Property Measurements of Liquid and Supercooled Platinum