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Intelligent Sensing System Research Center, Toyohashi University of Technology | 論文
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted Al_xGa_N
- Decoding heading directions from human brain activity(Summary of Awarded Presentation at the 26th Annual Meeting)
- Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III-V-N/Si Heterostructure