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Institute of industrial Science, The university of Tokyo | 論文
- Synthesis of New Mono-Carbonitride(W, Mo)(C, N) Powder by Heating W-Mo Alloy+C Mixed Powder in High-Pressure Nitrogen Gas (特集 硬質材料)
- Synthesis of New Mono-Carbonitride Mo(C,N) Powder by Heating Mo+C Mixed Powder in High-Pressure Nitrogen Gas (特集 硬質材料)
- Synthesis New Cabonitride W(C, N)Powder by Heating W+C Mixed Powder in High Pressure Nitrogen Gas
- X-Ray Magnetic Scattering in Fe-3 wt%Si
- Determination of damping ratio based on bender element, trigger accelerometer, and cyclic loading measurements (特集 耐震構造学研究グループ(ERS))
- Observation of 1.55μm Light Emission from InAs Quantum Dots in Photonic Crystal Microcavity
- Area-Controlled Growth of InAs Quantum Dots by Selective MOCVD
- Finite-Element Analysis of Metal Flow in Bearing Section during Extrusion Process of "L" "C" and "T" Sections - Combination of Three-Dimensional FE Simulation and Extrusion Die Design-2 -
- Finite-Element Analysis of Metal Flow in Bearing Section during Extrusion Process of Rectangular and Angle Sections - Combination of Three-Dimensional FE Simulation and Extrusion Die Design-1 -
- Electromechanical Analysis of a Micromachined Comb-Drive Actuator by Admittance Measurement
- Structure of Moist Layer and Sources of Water over the Southern Region Far from the Meiyu/Baiu Front
- Fabrication of an Inverted Scratch-Drive-Actuator for a Pwerful and Precise Conveyance System
- Large area optical devices with glass-pressed/metal-embedded sub-wavelength grating (Research Group on Production Technology)
- A Model of Hydromagnetic Turbulence in Accretion Disks. II
- A Steady Hydrodynamical Turbulence in Differentially Rotating Disks
- Shared Pseudo-Random Secret Generation Protocols (Special Section on Discrete Mathematics and Its Applications)
- Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
- Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
- Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
- Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications