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Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C. | 論文

• A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
• Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
• Effect of Rapid Thermal Annealing in N2 and Stacked Layer on SiO2–Al2O3–SiO2 Characteristics for Interpoly Silicon Dielectrics
• Superior Reliability of Gate-All-Around Polycrystalline Silicon Thin-Film Transistors with Vacuum Cavities Next to Gate Oxide Edges
• Deposition and Characterization of Low-Stress Plasma Enhanced Chemical Vapor Deposition of Tetraethoxysilane Oxide for Micro-Electro-Mechanical-Systems Applications
• Investigation of Discrete Dopant Fluctuation Effects in Sub-45-nm Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell

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