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Institute of Applied Physics, University of Erlangen-Nurnberg | 論文
- Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
- Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism
- Single, Individual Traps at the SiO_2/Si Interface in Sub-μm MOSFETs