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Institute for Materials Research (IMR), Tohoku University | 論文
- New Ternary Ordered Structures in CuMPt_6 (M=3d elements) Alloys(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Secondary Ordering in Ternary Alloy CuMnPt_6(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Growth and Characterization of Ultrathin Fe Films on Molecule-Adsorbed MgO Surfaces
- Study of Strain and Giant Magnetoresistance of Co/Cu Magnetic Multilayers(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Effect of Pressure on the Giant Magnetoresistance in Co/Cu Magnetic Multilayers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Thermoelectric Power and Hall Effect in Co-Al-O Granular Films
- Orientational Ordering of C_ Adsorbed on the Cu(111)1x1 Surface Studied by the FI-STM
- Field Ion-Scanning Tunneling Microscopy of Metallofullerenes Adsorbed on the Si(100)2×1 Surface
- Field Ion-Scanning Tunneling Microscopy Study of C_ on the Si(100) Surface
- Field Ion-Scanning Tunneling Microscopy Study of C_60 on the Si(100) Surface
- Scanning Tunneling Microscope Study of the Structural Transformation of the Si(111)7×7 Surface to the Na-Induced 3×1 Surface
- Anomalous Magnetic Moments of Mn_ and Mn_ Clusters
- Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
- Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
- Magnetooptical Spectra in PtMnSb between 1.2 and 5.9 eV
- Magnetooptical Kerr Spectrometer for 1.2-5.9 eV Region and its Application to FePt/Pt Multilayers
- Magnetooptical Characterization of Cl_b-Type Heusler Compounds, Pt_Mn_Sb_(X=-0.1 and 0, 0.1)
- Effects of Doping Elements on Oxidation Properties of Low-Activation Vanadium Alloys
- Effects of Room Temperature Heavy-Ion Irradiation on Magnetic and Electrical Properties of a Single Crystalline Iron Thin Film
- Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4