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Imec Leuven Bel | 論文
- Study of EUV resist outgassing/contamination for device integration using EUVL processes
- Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
- Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector
- Evaluation of a Pre-Objective Scan System for the Laser Recrystallization of Silicon on Insulator Material
- Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- Recent Advancements in 193 nm Step and Scan Lithography