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IBM Microelectronics Division | 論文
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
- Transmission Electron Microscopy Study of the Compositionally Graded InGaAs Layer
- Numerical Simulation of Etching and Deposition Processes
- Electrical Characterization of a Triple Self-Aligned Split-Gate Flash Cell for 0.18μm Embedded Application
- Effects of Gate-to-Body Tunneling Current on PD/SOI CMOS Circuits
- Plasma Properties of a Negative Ion Plasma Reactive Ion Etching System
- Numerical Simulation of Etching and Deposition Processes