Electrical Characterization of a Triple Self-Aligned Split-Gate Flash Cell for 0.18μm Embedded Application
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
-
Chen Bomy
Ibm Microelectronic Division
-
Chan Kevin
Ibm T. J. Watson Research Center
-
Schmidt Andreas
Infineon Technologies Corp.
-
Harrington Jay
Ibm Microelectronic Division
-
Lee Dana
Silicon Storage Technology Inc.
-
YAN Jiang
Infineon Technologies Corp.
-
GRUENSFELDER Christian
Infineon Technologies Corp.
-
KIM Kisang
Infineon Technologies Corp.
-
MIH Rebecca
IBM, Microelectronic Division
-
HARRINGTON Jay
IBM, Microelectronic Division
-
HOULIHAN Kevin
IBM, Microelectronic Division
-
LEE Hyun
IBM, Microelectronic Division
-
CHAN Kevin
IBM, T. J. Watson Research Center
-
JOHNSON Jeffrey
IBM, Microelectronics Division
-
CHEN Bomy
IBM, Microelectronic Division
-
LO Connie
Silicon Storage Technology, Inc.
-
LEVI Amitay
Silicon Storage Technology, Inc.
-
LAM Chung
IBM, Microelectronic Division
-
SHUM Danny
Infineon Technologies Corp.
-
Houlihan Kevin
Ibm Microelectronic Division
-
Johnson Jeffrey
Ibm Microelectronics Division
-
Lam Chung
Ibm Microelectronic Division
-
Mih Rebecca
Ibm Microelectronic Division
-
Levi Amitay
Silicon Storage Technology Inc.
-
Lo Connie
Silicon Storage Technology Inc.
関連論文
- Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology
- Electrical Characterization of a Triple Self-Aligned Split-Gate Flash Cell for 0.18μm Embedded Application