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Hyundai Electronics Industries Co., Ltd. | 論文
- Dependence of Subthreshold Hump and Reverse Narrow Channel Effect on the Gate Length by Suppression of Transient Enhanced Diffusion at Trench Isolation Edge
- Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs
- An Electrical Characteristics-Based Piecewise-Linear DC Model of the MOSFET
- Fully On-Chip Current Controlled Open-Drain Output Driver for High-Bandwidth DRAMs
- Study of Optimization Guidelines on Nitrogen Concentration in Nitrided Oxide for Logic and Dynamic Random Access Memory Application
- New Optimazation Guidelines on Nitrogen Concentration in NO Gate Dieletrics for Advanced Logic and DRAM Application