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Hitachi Ltd. Kokubunji Jpn | 論文
- Structural and Electrical Properties of Crystalline TiO_2 Thin Films Formed by Metalorgarnic Decomposition
- Structure Control of Ferroelectric Pb(Zr, Ti)O_3 Films Using SrTiO_3 Buffer Layer Prepared by Metalorganic Decomposition
- Interaction of Porous Pt-SnO_2 Gate Metal-Oxide-Semiconductor Field-Effect Transistor Device with CO
- Highly Sensitive MOSFET Gas Sensors with Porous Pt-SnO_x Gate Electrode for CO Sensing Applications
- Structural and Electrical Properties of Crystalline CeO_2 Films Formed by Metalorganic Decomposition
- Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode
- Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode
- Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
- Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation
- Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films
- Kinetics of Rapid Thermal Oxidation of Silicon
- Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks : Photolithography
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks
- Novel Process for Direct Delineation of Spin on Glass (SOG)
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)