スポンサーリンク
Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan | 論文
- Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
- Compact Modeling of Expansion Effects in LDMOS
- Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
- Compact Modeling of Expansion Effects in LDMOS