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High-technology Research Center And Department Of Electronics Faculty Of Engineering Kansai Universi | 論文
- An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film
- Quantum Mechanical Influence on Flat-Band Capacitance for Metal-Oxide-Semiconductor Structures with Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
- Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
- Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer
- Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation