スポンサーリンク
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan | 論文
- Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering
- Fabrication of BiFeO3 Thick Films by a Simple Liquid-Phase Epitaxial Growth Technique
- Strong Affinity between In and Al Impurities Doped in ZnO
- Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn cosubstitution and their ferroelectric properties
- Effect of flow in solution on motion of steps during solution growth
- Fabrication of (Bi,Pr)(Fe,Mn)O Thin Films on Polycrystalline Diamond Substrates by Chemical Solution Deposition and Their Properties (Special Issue : Ferroelectric Materials and Their Applications)
- Improved Dielectric Properties of Tetragonal ZrO2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering
- Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth
- Edge States of Bi Nanoribbons on Bi Substrates: First-Principles Density Functional Study
- Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates
- Formation of step bunches induced by flow in solution
- Structural Properties of Silicon Thin Films Prepared by Hot-Wire-Assisted Electron Cyclotron Resonance Chemical Vapor Deposition
- Rashba Effect on the Structure of the Bi One-Bilayer Film: Fully Relativistic First-Principles Calculation
- Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface
- Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
- Rashba Effect on the Structure of the Bi One-Bilayer Film : Fully Relativistic First-Principles Calculation
- Anisotropic lateral growth of homoepitaxial diamond (111) films by plasma-enhanced chemical vapor deposition