スポンサーリンク
Graduate School of Advanced Sciences and Matters, Hiroshima University | 論文
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced