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Graduate School Of Electronic Science And Technology Of Shizuoka University | 論文
- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures
- Analysis of Oxygen Sensing Mechanism in Gallium Oxide at high temperature
- Critical micelle concentration (CMC) sensor based on U-shaped optical fiber doped porous Sol-Gel cladding
- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures