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Gifu National Coll. Technol. Gifu Jpn | 論文
- Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
- Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
- Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
- Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
- Characterization of GaAs P-N Structures Grownon GaAs (111) A Substrates Using Controlled All-Silicon Doping
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Vibrational Response Analysis of Mistuned Bladed Disk
- Optimal Design of Turbine Blade using Sensitivity Analysis
- Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs