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Fundamental Research Laboratories, Nippon Electric Co., Ltd. | 論文
- Behaviours of Thermally Induced Microdefects in Heavily Doped Silicon Wafers
- Microdefects Formed in Carbon-Doped CZ Silicon Crystals by Oxygen Precipitation Heat Treatment
- Mechanisms of Mo or Mo-Silicide/n^+ -Si Ohmic Contact Degradation Induced by High-Temperature Annealing
- Degradation Mechanisms on Mo or Mo-silicide/n^+ -Si Ohmic Contacts on High Temperature Annealing : LATE NEWS