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Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan | 論文
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
- Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- Detection Limits of Trace Elements for Wavelength Dispersive Total X-Ray Fluorescence under High Flux Synchrotron Radiation
- Near-Ohmic Contact of n-GaAs with GaS/GaAs Quasi-Metal-Insulator-Semiconductor Structure
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots