スポンサーリンク
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan | 論文
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
- Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si1-xGex Substrate Based on the Theory
- Diffusion Coefficient of As and P in HfO2
- Diffusion Coefficient of As and P in HfO2