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Fujitsu Lab. Ltd. Atsugi Jpn | 論文
- First Demonstration of Electrically Driven 1.55μm Single-Photon Generator
- Single-photon generator for telecom applications
- Development of Electrically Driven Single-Photon Emitter at Optical Fiber Bands
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- A 1V Peak-to-Peak Driven 10-Gbps Slow-Light Silicon Mach-Zehnder Modulator Using Cascaded Ring Resonators
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- X-ray diffraction topography of BaTiO3 at phase transition temperature (Special issue: Ferroelectric materials and their applications)
- X-Ray Diffraction Topography on a BaTiO_3 Crystal (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- OS4(P)-6(OS04W0020) Ferroelectric Domain Observation by X-Ray Diffraction Topography
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- Barrier Effects of Tungsten Infer-Layer for Aluminum Diffusion in Aluminum/Silicon Ohmic-Contact System
- Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot
- Photon Antibunching Observed from an InAlAs Single Quantum Dot
- A Resonant-Tunneling Bipolar Transistor (RBT) : A New Functional Device with High Current Gain
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD