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Fujitsu Atsugi Laboratories Ltd. | 論文
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures
- Calculation of Impurity Concentrations in LPE InP Layers
- Electrical Properties of n-Type Gallium Arsenide at High Temperatures
- GaP Liquid Phase Epitaxial Growth Using a Vertical Furnace System
- Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs : B-2: LD AND LED-1
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution