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France Telecom Cnet | 論文
- Influence of Zinc Co-Doping on Carbon Doped InGaAs : Semiconductors
- New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
- High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors