スポンサーリンク
Faculty Of Physics Al. I. Cuza University | 論文
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga_2O_3 Films Deposited by CSD Method for High Temperatures
- Analysis of Oxygen Sensing Mechanism in Gallium Oxide at high temperature
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (シリコン材料・デバイス)
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (電子部品・材料)
- Influence of the thickness on β-Ga2O3 oxygen gas sensor at high temperature (電子デバイス)
- Oxygen Sensitivity in Gallium Oxide Thin Films and Single Crystals at High Temperatures