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Electrotechnical laboratory | 論文
- Excitation of Phonon-Polaritons with Asymmetric Transient Grating
- Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Flux Coupling in the Direct-Coupled High-T_c Superconducting Quantum Interference Devices
- Multiloop Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Design and Fabrication of a Multi Loop Superconducting Quantum Interference Device, the Clover-Leaf Superconducting Quantum Interference Device
- Superconducting Quantum Interference Device Voltage Swing Related to Additional Positive Feedback Parameters
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Asymmetric Bias Injection Technique for Drung-Type Superconducting Quantum Interference Devices
- 23aRC-8 The photo-induced commensurate modulated structure in site selective spin crossover complex trans-[Fe(abpt)_2(NCS)_2].
- ASYMMETRY PARAMETERS FOR FRAGMENT IONS AND AN ION-PAIR PRODUCED FROM CO_2 PHOTOEXCITED TO INNER-SHELL HOLE STATES
- 23aXB-7 格子モデルにおけるカイラル超伝導の表面状態密度(23aXB 超伝導,領域6(金属,超低温超伝導・密度波))
- 23pXA-5 トポロジカル超伝導体における状態密度の計算(23pXA 量子スピンホール効果・トポロジカル絶縁体,領域4(半導体メゾスコピック系・局在))
- 24pWP-12 強磁性体のスピン分極率に対するスピン揺らぎの効果(24pWP スピン流・スピンホール,領域3(磁性,磁気共鳴))
- Multiplet Structures in XPS Spectra of 3p and 3s Subshells of Magnetic Ions in Perovskite Fluorides
- Far Infrared Measurements in High-T_c Superconductor Sr_xLa_CuO_
- Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP