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Electrotechnical laboratory | 論文
- Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
- LPE Growth of In_Ga_xP_As_z (z≦0.01) on (100) GaAs Substrates and Its Lattice Constants and Photoluminescence
- LPE Growth and Luminescence of In_Ga_xP_yAs_ on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV
- Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates
- Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
- Photoemission and Absorption Spectroscopy of Mn_2Sb, MnAlGe, Mn_2As, Cr_2As and Fe_2As
- Resonance Photoemission Spectroscopy of Mn_2As, Cr_2As and Fe_2As
- An LPE Growth Method to Reduce Thermal Degradation of Substrates
- Direct Observation of Cadmium Arachidate Thin Films with Lateral and Normal Molecular Orientations by Superconducting Cryo-Electron Microscopy
- Lattice Images of Langmuir-Blodgett Films of Cadmium Arachidate Obtained by Superconducting Cryo-Electron Microscope
- Microstructure in LB Films of Long-Alkyl Nitroaniline Derivatives : Surfaces, Interfaces and Films
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
- Scanning Tunneling Microscopy and Spectroscopy Observation of Reduced BaTiO_3(100) Surface
- A New Kind of Magnetic Field-Induced Anisotropy of Ni_3Mn
- Dynamical Properties of Large Coherence Length Excitons in PIC J Aggregates
- Anisotropic Initial Stage of Laser-Induced Chlorine Reaction on Si(111) Observed by Surface-Sensitive Optical Methods
- Magnetoabsorption in Single-Crystal HgCr_2Se_4
- 23pXB-6 強磁性物質と超伝導物質との接合系における近接効果の理論(23pXB 超伝導・電荷密度波,領域6(金属,超低温超伝導・密度波))
- Ce^ Centres in YAlO_3 (YAP) Single Crystals