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Electrotechnical Lab. | 論文
- Helmholtz-Kohlrausch効果における観測視野の大きさの影響
- 観測者メタメリズムの年齢効果, 等色変動の成因
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Electronic Structures and Superconducting Mechanism of Ba_2Y_1Cu_3O_7
- Upper Critical Field of Sr_xLa_CuO_
- Analysis of Intermolecular Interaction in BEDT-TTF Based Organic Complexes Using the Dimer Approximation (高温超伝導体に関するETLワ-クショップ〔英文〕) -- (New High-Tc Compounds)
- Epitaxial Growth of Bi_4Ti_3O_/CeO_2/Ce_Zr_O_2 and Bi_4Ti_3O_/SrTiO_3/Ce_Zr_O_2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes
- Crystal Structure of New Metallic Compound Cu_6O_8・InCl
- Crystal Structure of New Compounds, Cu_6O_8Cu_2X (X=Cl, NO_3)
- Compositional Change of Sputtered YBa_2Cu_3O_y Films with Substrate Location
- The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
- Formation of Zn-O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si
- Absolute Intensity of Soft X-Rays of Synchrotron Radiation from the ETL-Storage Ring
- Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
- 電総研の非磁性実験棟(英文)
- KINETIC ENERGY DISTRIBUTIONS OF FRAGMENT IONS FORMED FROM CF_4 IN INNER-SHELL EXCITED STATED
- Doping Profile Measurement of a Bonded Silicon-on-Insulator Wafer by Capacitance-Voltage Measurements