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Electrical Engineering, Hosei University | 論文
- Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
- Interfacial Reaction in Polycide MOS Gate Structure Employing CVD Tungsten Silicide
- Damage Depth Profiles in Jon-Implanted Silicon by the Photoacoustic Displacement Technique