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Division Of Electronics And Computer Engineering Hanyang University:department Of Nanoscale Semicond | 論文
- Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al_2O_3 and SiO_2 stacked tunneling layers
- Enhancement of the programming speed in SANOS nonvolatile memory device designed utilizing Al_2O_3 and SiO_2 stacked tunneling layers
- Micromachining of glass by using a Nd : YAG (532nm) laser for the optical device
- Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions
- Multilevel dual-channel NAND flash memories with high read and program verifying speeds utilizing asymmetrically-doped channel regions