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Division Of Electron Devices Electrotechnical Laboratory | 論文
- Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
- Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
- Electron States in Crescent GaAs Coupled Quantum-Wires
- Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Terahertz Electromagnetic Wave Generation from Quantum Nanostructure
- Spectral Characteristics of Vertically Stacked Etched Multiple-Quantum-Wire Lasers Fabricated by Flow Rate Modulation Epitaxy
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- Behaviors of surfactant atoms on Si(001) surface
- Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
- Channeling Radiation from 1 MeV Electrons