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Div.of Electrical and Computer Engineering, Hanyang University | 論文

• RESURF LDMOS Technologies for High Voltage Integrated Circuits
• RESURF LDMOS Technologies for High Voltage Integrated Circuits
• High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect
• High Performance 600V LDMOSFET with a Polysilicon and a Metal Field Plate for SOI High Voltage Integrated Circuits
• An Accurate Drain Current Model of SOI High Voltage Lateral MOSFETs Including Self-Heating Effect

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