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Dept. of Electrical and Electronic Eng., The University of Tokushima | 論文

• Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
• Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
• Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs

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