スポンサーリンク
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan | 論文
- Native Oxidation Growth on Ge(111) and (100) Surfaces
- Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication
- Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays
- Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures
- Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation
- Formation of Cobalt and Cobalt-Silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma
- Novel Method Based on Quantum Chemistry for Calculation of Ion Induced Secondary Electron Emission Coefficient of MgO Surfaces
- Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
- Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases
- In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation