Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays
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概要
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MgO protecting layers, which have high ion induced secondary electron emission coefficient ($\gamma$), are required in order to decrease the firing voltage of plasma displays. Theoretical estimation of ideal $\gamma$ value is needed for a design of better protecting layers. In this study, we report our developed $\gamma$ calculation method based on a tight-binding quantum calculation and application to an estimation of $\gamma$ values of MgO protecting layers. From our calculation results, it was revealed that electron trap sites arising from surface roughness would work as an effective emission sites and increase $\gamma$ value. Especially for Xe+ species as induced ion, the $\gamma$ value changed drastically by the presence of the trapped electron. It is also suggested that a presence of chemisorbed water on the MgO surface decreases the $\gamma$ values because of the contribution of the electrons at the low energy levels originated from surface OH groups.
- 2010-04-25
著者
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Kikuchi Hiromi
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Onuma Hiroaki
Department Of Applied Chemistry Graduate School Of Engineering Tohoku University
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Ryuji Miura
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Serizawa Kazumi
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kazuma Suesada
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Masaki Kitagaki
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Itaru Yamashita
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ai Suzuki
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hideyuki Tsuboi
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Nozomu Hatakeyama
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Akira Endou
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hiromitsu Takaba
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Momoji Kubo
Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11-701 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hiroshi Kajiyama
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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Akira Miyamoto
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hiroaki Onuma
Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hiromi Kikuchi
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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