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Department of Quantum Engineering, Graduate School of Engineering, Nagoya University | 論文
- Development of Trace Isotope Analysis using Resonance Ionization Mass Spectrometry based on Isotope Selection with Doppler Shift of Laser Ablated Atoms
- Development of TOF-PET using Cherenkov Radiation
- Development of the Isotope Analysis Technique for Inorganic Trace Elements using Laser Ablation Assisted Resonance Ionization Mass Spectrometry (LA-RIMS)
- Rapid-Swept CW Cavity Ring-down Laser Spectroscopy for Carbon Isotope Analysis
- Development of High Dose Rate Sensing Method Based on Cavity Ring-Down Laser Spectroscopy
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH_4 Plasma with Ar, N_2, and H_2 Dilution Gases
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF_4 Plasmas
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)