スポンサーリンク
Department of Physical Electronics, Tokyo Institute of Technology O-okayama | 論文
- Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Analysis of H_2-Dilution Effects on Photochemical Vapor Deposition of Si Thin Films
- Heavily B-Doped Epitaxial Si Films Grown by Photochemical Vapor Deposition at Very Low Temperature (