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Department of Materials Science and Engineering, and Nano-factory, Meijo University | 論文
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Present and Future Nitride-Based Devices
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Microstructures of GaInN/GaInN Superlattices on GaN Substrates
- High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure